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Press release
2018年01月31日 11時00分
Source:
Mitsubishi Electric
三菱電機、6.5kV耐圧フルSiCパワー半導体モジュールを開発
鉄道・電力向けパワーエレクトロニクス機器の小型化・省エネに貢献
東京, 2018年01月31日 - (JCN Newswire) - 三菱電機株式会社は、独自の1チップ構造と新パッケージの採用により世界最高※1の定格出力密度を実現した6.5kV耐圧フルSiC※2 パワー半導体モジュールを開発しました。本モジュールを適用することで、高耐圧が求められる鉄道・電力向けパワーエレクトロニクス機器の小型化・省エネに貢献します。
開発の特長
1. フルSiCで6.5kV耐圧を実現し、パワーエレクトロニクス機器の小型化・省エネに貢献
- Siパワー半導体モジュールの最高耐圧6.5kVをフルSiCで実現
- フルSiC適用により高出力密度化とスイッチング損失の大幅低減、動作周波数の向上が可能となり、高耐圧パワーエレクトロニクス機器の小型化・省エネに貢献
2. 1チップ化と高放熱・高耐熱小型パッケージで世界最高の定格出力密度を実現
- ダイオードとMOSFET※3を1チップ化したダイオード内蔵SiC-MOSFETを開発し、チップ面積を半減
- 優れた熱伝導性と耐熱性を両立する絶縁基板と、信頼性の高い接合技術により、高放熱・高耐熱小型パッケージを実現
- 高耐圧パワー半導体モジュールとして世界最高の定格出力密度9.3kVA/ccを実現
本リリースの詳細は下記URLをご参照ください。
http://www.mitsubishielectric.co.jp/news/2018/0131-a.html
概要：三菱電機株式会社
詳細は
http://www.mitsubishielectric.co.jp
をご覧ください。
Source: Mitsubishi Electric
セクター: エレクトロニクス
Copyright ©2025 JCN Newswire. All rights reserved. A division of Japan Corporate News Network.
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