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Press release
2017年08月07日 11時30分
Source:
Showa Denko K.K.
昭和電工、新日鐵住金グループのパワー半導体用SiCに関する関連資産の譲受について
東京, 2017年08月07日 - (JCN Newswire) - 昭和電工株式会社(社長:森川 宏平)は、新日鐵住金株式会社及び新日鉄住金マテリアルズ株式会社より、パワー半導体の材料である炭化ケイ素(SiC)ウェハーの昇華再結晶法に関する関連資産を、2018年1月末をめどに譲り受けることとしました。
SiCパワー半導体は、現在主流のSi(シリコン)に比べ耐高温・耐電圧・大電流特性に優れた半導体材料で、電力制御に用いるモジュールの軽量・小型化と省エネルギー化に貢献することから、次世代パワー半導体として注目されています。一方で、MOSFETを含めたパワーモジュールのフルSiC化にはさらなる結晶欠陥の低減と低コスト化が課題となっています。
当社は、2005年からSiCエピタキシャルウェハー(以下、エピウェハー)の技術開発に取り組み、現在、月産3000枚(注)の製造・販売を行っています。今回、新日鉄住金グループの保有する関連資産を取得することで、本製品のさらなる品質向上を目指します。
当社は現在進行中の中期経営計画「Project 2020+」において、パワー半導体SiCを、将来の市場成長を見据え競争優位なビジネスモデルを確立する「優位確立事業」に位置付けています。市場要求に応える製品開発、供給体制の構築を進め、SiCパワー半導体の本格普及に貢献して参ります。
(注)1200V耐圧用デバイス仕様での換算。
本リリースの詳細は下記URLをご参照ください。
http://www.sdk.co.jp/news/2017/16031.html
概要:昭和電工株式会社
詳細は www.sdk.co.jp をご覧ください。
お問い合わせ先
昭和電工株式会社
広報室
03-5470-3235
Source: Showa Denko K.K.
セクター: 化学
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